ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,813, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Vertical gate-all-around device" was invented by Kuo-Cheng Chiang (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Guan-Lin Chen (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu City, Taiwan) and Jung-Chien Cheng (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertically protruding structure is formed. The vertically protruding structure includes a substrate, a first semiconductor layer disposed over the substrate, a channel layer disposed over the first semiconductor layer, and a second semiconductor layer...