US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Structure and formation method of semiconductor device with conductive contact" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,835, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with conductive contact" was invented by Chu-Yuan Hsu (Taichung City, Taiwan), Jia-Chuan You (Taoyuan City, Taiwan), Chia-Hao Chang (Hsinchu City, Taiwan), Kuo-Cheng Chiang (Zhubei City, Taiwan) and I-Han Huang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a method for forming a semiconductor device structure are provided. The method includes forming a metal gate stack wrapped around multiple semiconductor nanostructures. The s...