US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Shielded deep trench capacitor structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,871, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Shielded deep trench capacitor structure and methods of forming the same" was invented by Jen-Yuan Chang (Hsinchu City, Taiwan), Chia-Ping Lai (Hsinchu City, Taiwan) and Chien-Chang Lee (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A moat trench laterally surrounding a device region is formed in a substrate. A conductive metallic substrate enclosure structure is formed in the moat trench. Deep trenches are formed in the substrate, and a trench capacitor structure is formed in the deep trenches. The substrate may be thinned ...