US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Semiconductor device with cap element" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,840, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with cap element" was invented by Shing-Huang Wu (Hsin-Chu City, Taiwan) and Jian-Shian Chen (Hsin-Chu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes an epitaxial structure over a substrate and a cap element over the epitaxial structure. The cap element has a first thickness measured between a top surface of the cap element and a top surface of the epitaxial structure. The cap element has a second thickness measured betwe...