US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Ruthenium oxide film and ruthenium liner for low-resistance copper interconnects in a device" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,133, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ruthenium oxide film and ruthenium liner for low-resistance copper interconnects in a device" was invented by Shu-Cheng Chin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Selective ruthenium and selective ruthenium oxide may be used in single damascene processes and/or dual damascene processes to form BEOL metallization layers and vias of an electronic device. A selective ruthenium liner may be formed to achieve a low contact resistance and a low sheet resistance for the BEOL metallization layers and vias, to promote adhesio...