US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Redistribution layer metallic structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,100, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Redistribution layer metallic structure and method" was invented by Harry-Haklay Chuang (Zhubei, Taiwan), Wei Cheng Wu (Hsinchu County, Taiwan), Chung-Jen Huang (Tainan, Taiwan), Wen-Tuo Huang (Tainan, Taiwan) and Chia-Sheng Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first IC devices on a first frontside of a first semiconductor substrate and second IC devices on a second frontside of a second semiconductor substrate; forming a first contact pad over the first IC devices from the first frontsid...