ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,812, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for fabricating semiconductor device having nanostructure transistor with cap layer" was invented by Yen-Sheng Lu (Miaoli, Taiwan), Chung-Chi Wen (Taipei, Taiwan), Yen-Ting Chen (Taichung, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu, Taiwan), Chih-Chiang Chang (Hsinchu, Taiwan), Chien-I Kuo (Chiayi, Taiwan), Yuan-Ching Peng (Hsinchu, Taiwan), Chih-Ching Wang (Kinmen, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Chii-Horng Li (Hsinchu, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Offic...