US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Magnetoresistive random-access memory (MRAM) cell and method of operation thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,939, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetoresistive random-access memory (MRAM) cell and method of operation thereof" was invented by Harry-Hak-Lay Chuang (Zhubei City, Taiwan), Ching-Huang Wang (Hsinchu, Taiwan), Hung Cho Wang (Hsinchu, Taiwan), Tien-Wei Chiang (Taipei City, Taiwan) and Wen-Chun You (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary magnetoresistive random-access memory (MRAM) cell is configured to store more than one bit. The MRAM cell includes a first magnetic tunneling junction (MTJ) and a second MTJ connected in parallel. The...