US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Lithography focus control method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,681,383, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Lithography focus control method" was invented by I-Hsiung Huang (Hsinchu, Taiwan), Yung-Cheng Chen (Jhubei, Taiwan), Tzung-Hua Lin (Taipei, Taiwan) and Feng-Yuan Chang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photolithography exposure of a photoresist coating on a semiconductor wafer uses an optical projection system to form a latent image. The photolithography exposure further uses a mask with a set of multiple pattern focus (MPF) marks. Each MPF mark of includes features having different critical dimension (CD) size...