US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Isolation structures for transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,797, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Isolation structures for transistors" was invented by Shahaji B. More (Hsinchu City, Taiwan) and Chun Hsiung Tsai (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to methods for the fabrication of gate-all-around (GAA) field effect transistors (FETs) with low power consumption. The method includes depositing a first and a second epitaxial layer on a substrate and etching trench openings in the first and second epitaxial layers and the substrate. The method further includes removing, through th...