US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Etching-damage-free intermetal dielectric layer with thermal dissipation feature" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,157, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Etching-damage-free intermetal dielectric layer with thermal dissipation feature" was invented by Kai-Fang Cheng (Hsinchu, Taiwan), Cherng-Shiaw Tsai (Hsinchu, Taiwan), Cheng-Chin Lee (Hsinchu, Taiwan), Yen-Ju Wu (Hsinchu, Taiwan), Yen-Pin Hsu (Hsinchu, Taiwan), Li-Ling Su (Hsinchu, Taiwan), Ming-Hsien Lin (Hsinchu, Taiwan) and Hsiao-Kang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending throu...