ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,148, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Dummy metal-insulator-metal structures within vias" was invented by Yuan-Yang Hsiao (Taipei, Taiwan) and Hsiang-Ku Shen (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Via array configurations for metal-insulator-metal (MIM) capacitor structures are disclosed herein. An exemplary MIM capacitor structure includes a capacitor bottom metal layer, a first dielectric layer over the capacitor bottom metal layer, a capacitor middle metal layer over the first dielectric layer, a second dielectric layer over the capacitor middle me...