US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Complementary field effect transistor with conductive through substrate layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,834, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Complementary field effect transistor with conductive through substrate layer" was invented by Wei-Xiang You (Hsinchu, Taiwan), Wei-De Ho (Hsinchu, Taiwan), Hsin Yang Hung (Hsinchu, Taiwan), Meng-Yu Lin (Hsinchu, Taiwan), Hsiang-Hung Huang (Hsinchu, Taiwan), Chun-Fu Cheng (Hsinchu, Taiwan), Kuan-Kan Hu (Hsinchu, Taiwan), Szu-Hua Chen (Hsinchu, Taiwan), Ting-Yun Wu (Hsinchu, Taiwan), Wei-Cheng Tzeng (Hsinchu, Taiwan), Wei-Cheng Lin (Hsinchu, Taiwan), Cheng-Yin Wang (Hsinchu, Taiwan), Jui-Chien Huang (Hsinchu, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* r...