US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Chemical vapor deposition apparatus with cleaning gas flow guiding member" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,127, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Chemical vapor deposition apparatus with cleaning gas flow guiding member" was invented by Chih-Hung Yeh (Tainan City, Taiwan), Tsung-Lin Lee (Tainan City, Taiwan), Yi-Ming Lin (Tainan City, Taiwan), Sheng-Chun Yang (Tainan City, Taiwan) and Tung-Ching Tseng (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet p...