US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,826, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same" was invented by Liang-Yu Su (Yunlin County, Taiwan), Hung-Chih Tsai (Daliao Township, Taiwan), Ruey-Hsin Liu (Hsinchu, Taiwan), Ming-Ta Lei (Hsinchu City, Taiwan), Chang-Tai Yang (Taipei City, Taiwan), Te-Yin Hsia (Taipei, Taiwan), Yu-Chang Jong (Hsinchu City, Taiwan) and Nan-Ying Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body s...