US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Increasing contact areas of contacts for MIM capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,794, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Increasing contact areas of contacts for MIM capacitors" was invented by Yao-Te Huang (Hsinchu, Taiwan) and Yung-Shih Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first electrode layer having a first opening, with the first opening having a first lateral dimension, forming a first capacitor insulator over the first electrode layer, and forming a second electrode layer over the first capacitor insulator, with the second electrode layer having a second opening. The first opening is directly underl...