ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,529, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and methods of manufacturing thereof" was invented by Jun-Ye Liu (Hsinchu, Taiwan), Jih-Sheng Yang (Hsinchu, Taiwan), Yu-Hsien Lin (Hsinchu, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor devices is disclosed. The method includes forming a gate trench over a semiconductor channel, the gate trench being surrounded by gate spacers. The method includes sequentially depositing a work function metal, a glue metal, and an electrode metal in the g...