US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Strained ferromagnetic hall metal SOT layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,977, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Strained ferromagnetic hall metal SOT layer" was invented by Shy-Jay Lin (Jhudong Township, Taiwan), Chien-Min Lee (Hsinchu, Taiwan) and MingYuan Song (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a spin-orbit torque (SOT) induction structure which may be strained and seedless and formed with a perpendicular magnetic anisotropy. A magnetic tunnel junction (MTJ) stack is disposed over the SOT induction structure. A spacer layer may decouple layers between the SOT induction structure and the MTJ st...