ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,807, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Wu-Wei Tsai (Taoyuan, Taiwan), Yan-Yi Chen (Taipei, Taiwan), Yu-Ming Hsiang (New Taipei, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an active layer, a first gate insulator layer disposed over the active layer, a first gate layer disposed over the gate insulator layer, at least one charged layer disposed between the first gate insulator layer and the active layer,...