US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor structure and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,804, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and forming method thereof" was invented by Jhih-Bin Chen (Hsinchu, Taiwan) and Ming Chyi Liu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and forming method thereof are provided. The semiconductor structure includes a substrate, a gate dielectric, a gate electrode and dielectric structures. The gate dielectric has a top surface aligned with a top surface of the substrate. The gate electrode is disposed over the substrate and overlaps the gate dielectric. The gate electr...