US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor devices including two-dimensional material and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,830, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices including two-dimensional material and methods of fabrication thereof" was invented by Mrunal Abhijith Khaderbad (Hsinchu, Taiwan) and Sathaiya Dhanyakumar Mahaveer (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to embodiments of the present disclosure, two-dimensional (2D) materials may be used as nanosheet channels for multi-channel transistors. Nanosheet channels made two-dimensional (2D) materials can achieve the same drive current at smaller dimensions and/or fewer number of channels, there...