US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor device with through substrate conductive pillars having different cross-sectional areas and method of making" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,033, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Semiconductor device with through substrate conductive pillars having different cross-sectional areas and method of making" was invented by Jen-Yuan Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor arrangement and method of forming the semiconductor arrangement are provided. The semiconductor arrangement includes a device having a first surface and a second surface opposite the first surface. A first through substrate via (TSV) structure extends between the first surface and the second surface in a first r...