US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,778, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Yi-Cheng Chu (Chiayi, Taiwan), Chien-Hua Huang (Miaoli County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode...