ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,821, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and fabricating method thereof" was invented by Cheng-Chien Huang (Hsinchu, Taiwan), Chi-Wen Liu (Hsinchu, Taiwan), Horng-Huei Tseng (Hsinchu, Taiwan) and Tsung-Yu Chiang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semico...