US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Resistive memory with enhanced redundancy writing" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,224, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory with enhanced redundancy writing" was invented by Yu-Der Chih (Hsin-Chu, Taiwan), Chung-Cheng Chou (Hsin-Chu, Taiwan), Chun-Yun Wu (Fuxing Township, Changhua County, Taiwan) and Chen-Ming Hung (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a ...