ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,833, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"PVD target structure and method for preparing the same" was invented by Chia-Hsi Wang (Changhua County, Taiwan) and Yen-Yu Chen (Taichung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A PVD target structure is provided. The PVD target structure includes a target body having a first side and a second side opposite to the first side. The first side of the target body includes a first region and a second region surrounding the first region. The second region comprises a knurled profile. A method for preparing PVD target structure is...