US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Methods of forming semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,818, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming semiconductor devices" was invented by Chien-Yuan Chen (Hsinchu, Taiwan), Jui-Ping Lin (Hsinchu, Taiwan), Chen-Ming Lee (Yangmei, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, t...