US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Method for forming a low-k spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,806, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming a low-k spacer" was invented by Hsiu-Yu Kang (Taipei City, Taiwan) and Hong-Wei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasm...