US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Memory device with jogged backside metal lines" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,713, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Memory device with jogged backside metal lines" was invented by Jui-Lin Chen (Taipei, Taiwan), Kian-Long Lim (Hsinchu, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan), Yi-Feng Ting (Taipei, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan), Lien-Jung Hung (Taipei, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first source/drain feature on a front side of a substrate. The device includes a first backside metal line under the first source/drain feature and extending lengthwise ...