US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Interconnect with redeposited metal capping and method forming same" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,025, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect with redeposited metal capping and method forming same" was invented by Hsiang-Wei Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first conductive feature in a first dielectric layer, forming a first metal cap over and contacting the first conductive feature, forming an etch stop layer over the first dielectric layer and the first metal cap, forming a second dielectric layer over the etch stop layer; and etching the second dielectric layer and the etch stop layer to form an opening. ...