US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Integrated circuit structure with a reduced amount of defects and methods for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,825, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit structure with a reduced amount of defects and methods for fabricating the same" was invented by Chia-Hao Pao (Hsinchu, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Chih-Hsuan Chen (Hsinchu, Taiwan) and Shih-Hao Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first and a second stacks of channel layers each extending from a first height to a second height. A first dielectric feature on a first side of the first stack and between the first and the second stacks extends from a third heigh...