ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,723, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Efuse cells with backside power rails" was invented by Li-Chin Yu (Hsinchu, Taiwan) and Meng-Sheng Chang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell having a transistor and a resistor coupled to each other, where the memory cell is on the first side, and the transistor further includes a plurality of first sub-transistors disposed in a first region of the substate. The memory device includes a plurality of second sub-transistors disposed in a second region of the substrate. The memory devi...