US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Dielectric layers having nitrogen-containing crusted surfaces" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,028, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Dielectric layers having nitrogen-containing crusted surfaces" was invented by Tsai-Jung Ho (Changhua County, Taiwan), Po-Cheng Shih (Hsin Chiu, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Interconnect structures having dielectric layers with nitrogen-containing crusts and methods of fabrication thereof are disclosed herein. An exemplary method includes forming a first interconnect opening in a first interlayer dielectric (ILD) layer that exposes an underlying conductive feature, such as a source/dr...