US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Device having a diffusion break structure extending within a fin and interfacing with a source/drain" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,829, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Device having a diffusion break structure extending within a fin and interfacing with a source/drain" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure comprising one or more fins formed on a substrate and extending along a first direction; one or more gates formed on the one or more fins and extending along a second direction substantially perpendicular to the first direction, the one or more gates including an first isolation gate and...