US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Complementary field effect transistor with oblique conductive through substrate layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,777, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Complementary field effect transistor with oblique conductive through substrate layer" was invented by Hsin-Chih Wang (Hsinchu, Taiwan), Yu-Tien Shen (Hsinchu, Taiwan) and Yu-Chen Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes: a complementary transistor including: a first transistor having a first source/drain region; and a second transistor above the first transistor in a vertical direction, and having a second source/drain region, the second transistor being offset from the first transistor in a first di...