US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Transistor contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,620, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor contacts and methods of forming the same" was invented by Yu-Lien Huang (Jhubei, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan), Jr-Hung Li (Chupei, Taiwan) and Chun-Kai Chen (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a source/drain region over a semiconductor substrate; a dielectric layer over the source/drain region, the dielectric layer including a first dielectric material; an inter-layer dielectric over the dielectric layer, the inter-layer dielectric including a second dielectr...