US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Transistor, integrated circuit, and manufacturing method of transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,342, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor, integrated circuit, and manufacturing method of transistor" was invented by Neil Quinn Murray (Hsinchu, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Mauricio Manfrini (Hsinchu County, Taiwan) and Tsann Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a gate electrode, a gate dielectric layer, a short range order layer, a channel layer, and source/drain regions. The gate dielectric layer is disposed over the gate electrode. The short range order layer is disposed between the gate electrode and the...