US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Source/drain regions formed using metal containing block masks" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,367, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain regions formed using metal containing block masks" was invented by Hui-Lin Huang (Hsinchu, Taiwan), Li-Li Su (Chubei, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan) and Chii-Horng Li (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising ...