US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Semiconductor structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,371, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and method for manufacturing the same" was invented by Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Chung-Wei Hsu (Baoshan Township, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first channel region disposed in a first device region over a substrate; a first gate dielectric layer disposed over the first channel region; a second gate dielectric layer disposed over the second channe...