US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Semiconductor fin structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,373, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor fin structures" was invented by Ryan Chia-Jen Chen (Hsinchu, Taiwan), Yih-Ann Lin (Jhudong Township, Taiwan), Chia Tai Lin (Taichung, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor substrate, and a plurality of semiconductor fins parallel to each other, wherein the plurality of semiconductor fins is a portion of the semiconductor substrate. A Shallow Trench Isolation (STI) region is on a side of the plurality of semiconductor fins. The STI region has a to...