US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Semiconductor device with gate isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,364, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with gate isolation structure" was invented by Ting-Gang Chen (Taipei, Taiwan), Wan Chen Hsieh (Hsinchu, Taiwan), Bo-Cyuan Lu (New Taipei, Taiwan), Tai-Jung Kuo (Hsinchu, Taiwan), Kuo-Shuo Huang (Taipei, Taiwan), Chi-Yen Tung (Changhua County, Taiwan) and Tai-Chun Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and ...