US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,319, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Hsu Ming Hsiao (Hsinchu, Taiwan) and Hsiu-Hao Tsao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, along with methods of forming such, are described. The device includes a semiconductor material disposed over a substrate, a first epitaxial source/drain region in contact with a first end of the semiconductor material, a second epitaxial source/drain region in contact with a second end opposite the first end of the semiconduct...