US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Semiconductor device having cut gate dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,372, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having cut gate dielectric" was invented by Chang-Yun Chang (Taipei, Taiwan), Bone-Fong Wu (Hsinchu, Taiwan), Ming-Chang Wen (Kaohsiung, Taiwan) and Ya-Hsiu Lin (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor fin, a gate structure, gate spacers, and a dielectric feature. The semiconductor fin is over a substrate. The gate structure is over the semiconductor fin and includes a gate dielectric layer over the semiconductor fin and a gate metal covering the gate dielectric layer. T...