US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,345, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Ming-Yang Li (Hsinchu, Taiwan), Lain-Jong Li (Hsinchu, Taiwan), Han Yeh (Hsinchu County, Taiwan) and Wen-Hao Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channe...