US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Photosensor having gate-all-around structure and method for forming the photosensor" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,408, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photosensor having gate-all-around structure and method for forming the photosensor" was invented by P.C. Chang (Hsinchu, Taiwan), Ping-Hao Lin (Hsinchu, Taiwan) and Kuo-Cheng Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photosensor includes a substrate, a photo-detecting column, a gate structure, a floating node structure and a channel structure. The substrate has a first doping type. The photo-detecting column has a second doping type and is disposed in the substrate. The gate structure is disposed on the substrate i...