US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Passive device structure stress reduction" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,655, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Passive device structure stress reduction" was invented by Yuan-Yang Hsiao (Hsinchu, Taiwan), Tsung-Chieh Hsiao (Changhua County, Taiwan), Wen-Chiung Tu (Hsinchu, Taiwan), Ying-Yao Lai (Hsinchu, Taiwan), Chen-Te Chu (Hsinchu, Taiwan), Mao-Nan Wang (Hsinchu, Taiwan), Chen-Chiu Huang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a back-end-of-line (BEOL) passive device structure are provided. A method according to the present disclosure includes depositing a first conducto...