US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Nanosheet semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,358, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Nanosheet semiconductor device and method for manufacturing the same" was invented by Zhi-Chang Lin (Hsinchu, Taiwan), Ko-Feng Chen (Hsinchu, Taiwan), Chien-Ning Yao (Hsinchu, Taiwan) and Chien-Hung Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure in...