US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Method for manufacturing a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,572, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing a semiconductor device" was invented by Wan-Lin Tsai (Hsinchu, Taiwan), Jung-Hau Shiu (New Taipei, Taiwan), Ching-Yu Chang (Hsinchu, Taiwan), Jen Hung Wang (Hsinchu, Taiwan), Shing-Chyang Pan (Jhudong Township, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and conta...