US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Memory device and method for manufacturing the same using hard mask" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,273, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same using hard mask" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Feng-Cheng Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an underlying substrate, two stack units disposed over the underlying substrate, and a feature disposed between the stack units. The stack units are spaced apart from each other. Each of the stack units includes a plurality of conductive films and a plurality of dielectric films disposed to alternate with the conduc...