ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,554,433, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Jen-Chieh Liu (Hsinchu, Taiwan), Hung-Li Chiang (Taipei, Taiwan), Jui-Jen Wu (Hsinchu, Taiwan), Win-San Khwa (Taipei, Taiwan) and Yi-Lun Lu (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes: a write transistor, with a gate terminal connected to a write word line, and having a first source/drain terminal connected to a bit line; a storage transistor, with a gate terminal coupled to a second source/drain terminal of the write transistor to form a ...